Friday, 28 July 2006

Intel, Micron Debuts 50 nm NAND Flash Memory

Intel and Micron have announced that they are sampling a 4 gigabit (Gb) NAND flash technology on memory built on 50 nanometer (nm) process technology. The samples were manufactured through IM Flash Technologies, a joint development and manufacturing venture from Micron and Intel.

According to industry research forecasts, the NAND market segment is estimated to reach USD 13 to USD 16 billion in 2006 and grow to about USD 25 to USD 30 billion by 2010.

Currently, Samsung leads the NAND flash market with more than 50 percent market share and the new NAND flash joint venture may give a tough competition to the company. Samsung recently began mass production of 8-Gbit NAND flash-memory device made using 60-nm technology.

"Micron entered the NAND business in 2004 using a 90 nm process. In a few short years and through our collaboration with Intel, we are now poised to introduce a leadership product based on a cutting-edge process technology," said Brian Shirley, Micron vice president of memory.

"We started shipping products to customers in the first quarter of this year, and we're seeing very high demand across multiple flash densities," said Brian Harrison, vice president and general manager, Flash Memory Group, Intel.

Micron and Intel formed IM Flash Technologies (IMFT) in January to manufacture NAND flash memory products for the two companies. IMFT has been aggressively ramping its manufacturing facilities since the company's formation. Micron is currently supplying the venture NAND flash from its Boise fabrication facilities, and Micron's 300 mm facility in Manassas, Va., will be online later this year to supply IMFT with NAND.